NSN 5961-01-408-6789
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-408-6789 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BZV85C24, 211240, 5961-01-408-6789, 01-408-6789, 5961014086789, 014086789
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 23, 1995 | 01-408-6789 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-408-6789
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BZV85C24 | 19701 | NORTH AMERICAN PHILIPS CORPPHILIPS COMPONENTS |
| 211240 | 34280 | WAVETEK RF PRODUCTS INC |
Technical Data | NSN 5961-01-408-6789
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET24.0 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | BACCE250.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.3 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-41 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 28.0 MILLIMETERS MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 4.8 MILLIMETERS MAXIMUM |
| OVERALL DIAMETER | 2.6 MILLIMETERS MAXIMUM |
| END ITEM IDENTIFICATION | 6625-01-363-6212 |