NSN 5961-01-412-6886
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-412-6886 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 50822800, 5082-2800, 1N57111N6263, 1N5711/1N6263, A2S800, 1014421, 101442-1, 50822800, 5082-2800, 50822800, 5082-2800, 1N57111N6263, 1N5711/1N6263, HP50822146, HP5082-2146, 4000102001, 40-001020-01, JANTX1N5711, 7849788P001, TX1N5711, MILS19500444, MIL-S-19500/444, MILPRF19500444, MIL-PRF-19500/444, JAN1N5711, JANTX5711, JANTX1N57111, JANTX1N5711-1, JANTX1N5711, 9259741B, 925974-1B, 3533691012, 353-3691-012, 4809020001, 4809-02-0001, 5961-01-412-6886, 01-412-6886, 5961014126886, 014126886
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 26, 1995 | 01-412-6886 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-412-6886
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5082-2800 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1N5711/1N6263 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| A2S800 | 14844 | FREQUENCY ELECTRONICS, INC. |
| 101442-1 | 24469 | HERLEY INDUSTRIES, INC.DBA ULTRA ELECTRONICS HERLEY |
| 5082-2800 | 54893 | HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV |
| 5082-2800 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1N5711/1N6263 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HP5082-2146 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 40-001020-01 | 30890 | INTERLINK COMMUNICATIONS INC |
| JANTX1N5711 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 7849788P001 | 03538 | LOCKHEED MARTIN CORPORATIONDIV RMS |
| TX1N5711 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/444 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/444 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N5711 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX5711 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N5711-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N5711 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 925974-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 353-3691-012 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 4809-02-0001 | 34280 | WAVETEK RF PRODUCTS INC |
Technical Data | NSN 5961-01-412-6886
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDE50.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACCG33.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |