NSN 5961-01-412-9925
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-412-9925 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: PL386D30186, PL386D3018-6, MILS19500435, MIL-S-19500/435, MILPRF19500435, MIL-PRF-19500/435, JAN1N4113, JANTX1N41131, JANTX1N4113-1, 5961-01-412-9925, 01-412-9925, 5961014129925, 014129925
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 03, 1995 | 01-412-9925 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-412-9925
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| PL386D3018-6 | 51435 | EMS DEVELOPMENT CORPORATION |
| MIL-S-19500/435 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/435 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N4113 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4113-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-412-9925
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET19.0 NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 2.120 INCHES MINIMUM AND 3.300 INCHES MAXIMUM |
| SPECIFICATION/STANDARD DATA | 91349-M19500 TO 435 GOVERNMENT SPECIFICATION |