NSN 5961-01-413-3880
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-413-3880 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: DZ910108B, 7207201, 720720-1, 5961-01-413-3880, 01-413-3880, 5961014133880, 014133880
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 12, 1995 | 01-413-3880 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-413-3880
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DZ910108B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 720720-1 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-413-3880
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT760.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCF200.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG3.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.560 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.235 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| TEST DATA DOCUMENT | 05869-720720 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |