NSN 5961-01-413-6896
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-413-6896 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MILS19500437, MIL-S-19500/437, MILPRF19500437, MIL-PRF-19500/437, JANTX1N5523D1, JANTX1N5523D-1, JANTX1N5523D, G2002251, G200225-1, 5961-01-413-6896, 01-413-6896, 5961014136896, 014136896
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 19, 1995 | 01-413-6896 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-413-6896
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MIL-S-19500/437 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/437 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N5523D-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N5523D | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| G200225-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-413-6896
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET5.1 NOMINAL |
| INCLOSURE MATERIAL | 0$DGS0000$DPC0000 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| END ITEM IDENTIFICATION | 01-262-3005 E/I FSCM 52088 |