NSN 5961-01-414-8640
Part Details | TRANSISTOR
5961-01-414-8640 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SST215T1, SST215, 91680811, 5961-01-414-8640, 01-414-8640, 5961014148640, 014148640
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 15, 1995 | 01-414-8640 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-414-8640
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SST215T1 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SST215 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 91680811 | F6481 | THALES SA |
Technical Data | NSN 5961-01-414-8640
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW30.0 MAXIMUM AND CAX20.0 MAXIMUM AND C5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG350.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-143 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.033 INCHES MAXIMUM |