NSN 5961-01-414-9170
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-414-9170 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MMBD7000LT1, MMBD7000L, MMBD7000LT1, MMBD7000LT1, 5961-01-414-9170, 01-414-9170, 5961014149170, 014149170
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 16, 1995 | 01-414-9170 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-414-9170
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MMBD7000LT1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MMBD7000L | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MMBD7000LT1 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| MMBD7000LT1 | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
Technical Data | NSN 5961-01-414-9170
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CEC100.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF200.00 MILLIAMPERES NOMINAL AND BACCF500.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF225.0 MILLIWATTS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-236AB |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 BONDING PAD |