NSN 5961-01-418-3884
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-418-3884 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 7575607001, 7575607-001, SM1708, JANTX1N5615US, 5961-01-418-3884, 01-418-3884, 5961014183884, 014183884
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 25, 1995 | 01-418-3884 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-418-3884
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 7575607-001 | 13160 | GENERAL DYNAMICS LAND SYSTEMS INC.DBA WOODBRIDGE TECHNICAL CENTER |
| SM1708 | 14552 | MICROSEMI CORPORATION |
| JANTX1N5615US | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-418-3884
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDE200.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCF25.00 AMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 CASE |
| OVERALL LENGTH | 0.168 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.091 INCHES MINIMUM AND 0.128 INCHES MAXIMUM |
| OVERALL WIDTH | 0.091 INCHES MINIMUM AND 0.128 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 13160-7575607 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| PRECIOUS MATERIAL | SILVER |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS SILVER |