NSN 5961-01-418-5362
Part Details | TRANSISTOR
5961-01-418-5362 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RF2260, 88802000521, 8880200052-1, 5961-01-418-5362, 01-418-5362, 5961014185362, 014185362
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 29, 1995 | 01-418-5362 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-418-5362
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RF2260 | 50998 | M/A-COM TECHNOLOGY SOLUTIONS INC. |
| 8880200052-1 | 57057 | NAVCOM DEFENSE ELECTRONICS, INC. |
Technical Data | NSN 5961-01-418-5362
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW60.0 MAXIMUM AND CAX60.0 MAXIMUM AND C0.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | ATCAF14.4 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON AND 1 CASE |
| OVERALL LENGTH | 1.020 INCHES NOMINAL |
| OVERALL HEIGHT | 0.147 INCHES MINIMUM AND 0.167 INCHES MAXIMUM |
| OVERALL WIDTH | 0.815 INCHES MINIMUM AND 0.825 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 57057-8880200052 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | AN/UPM-155 |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |