NSN 5961-01-419-7857

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-419-7857 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 3N255, 2KBP02M, 3112AS8141, 3112AS814-1, 5961-01-419-7857, 01-419-7857, 5961014197857, 014197857

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 29, 199501-419-785762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-419-7857
Part Number Cage Code Manufacturer
3N25514936GENERAL SEMICONDUCTOR INC
2KBP02M14936GENERAL SEMICONDUCTOR INC
3112AS814-130003NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT
Technical Data | NSN 5961-01-419-7857
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 REPETITIVE PEAK REVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACC2.00 AMPERES AND ACF60.00 AMPERES
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +165.0 DEG CELSIUS
OVERALL LENGTH0.560 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL WIDTH0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL HEIGHT0.460 INCHES MINIMUM AND 0.500 INCHES MAXIMUM