NSN 5961-01-420-8905
Part Details | TRANSISTOR
5961-01-420-8905 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NPF406, 8042381, 804238-1, 31648301, 3164830-1, 5961-01-420-8905, 01-420-8905, 5961014208905, 014208905
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 27, 1995 | 01-420-8905 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-420-8905
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NPF406 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 804238-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 3164830-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-420-8905
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX30.0 MAXIMUM AND C0.0 MAXIMUM AND CDW40.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.270 INCHES NOMINAL |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
| OVERALL WIDTH | 0.270 INCHES NOMINAL |
| SPECIAL FEATURES | MTD TO MOUNTING PAD |
| TEST DATA DOCUMENT | 96214-804238 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |