NSN 5961-01-422-2876
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-422-2876 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BZX84C6V8, 918941, BZX84C6V8, BZX84-C6V8, 4074713, 407-4713, BZX84C6V8, BZX84-C6V8, 5322 130 80406, 5961-01-422-2876, 01-422-2876, 5961014222876, 014222876
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 28, 1995 | 01-422-2876 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-422-2876
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BZX84C6V8 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 918941 | 89536 | FLUKE CORPORATION |
| BZX84-C6V8 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 407-4713 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| BZX84-C6V8 | 0LUA3 | PHILIPS COMPONENTS |
| 5322 130 80406 | H0002 | PHILIPS ELECTRONICS NEDERLAND B.V.DBA CAMPUS |
Technical Data | NSN 5961-01-422-2876
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET6.8 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| POWER RATING PER CHARACTERISTIC | BZAAG350.0 MILLIWATTS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-23 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 3.0 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 1.1 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.5 MILLIMETERS MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |