NSN 5961-01-423-1570
Part Details | TRANSISTOR
5961-01-423-1570 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JANTX2N4150, 6815189, 5961-01-423-1570, 01-423-1570, 5961014231570, 014231570
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 16, 1995 | 01-423-1570 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-423-1570
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX2N4150 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 6815189 | 53711 | NAVAL SEA SYSTEMS COMMAND |
Technical Data | NSN 5961-01-423-1570
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM100.0 MAXIMUM AND CA+70.0 MAXIMUM AND CBA7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC10.00 AMPERES NOMINAL |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM |
| SPECIAL FEATURES | SELECTED FOR FORWARD CURRENT TRANSFER RATIO = 60 MIN; JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 53711-6815189 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |