NSN 5961-01-439-0241
Part Details | TRANSISTOR
5961-01-439-0241 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: H980122002B, H980122-002B, 4SL0042, 4SL004-2, 5961-01-439-0241, 01-439-0241, 5961014390241, 014390241
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 25, 1996 | 01-439-0241 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-439-0241
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| H980122-002B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 4SL004-2 | 0TH60 | SAC-TEC LABS, INC. |
Technical Data | NSN 5961-01-439-0241
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX60.0 MAXIMUM AND CAW60.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD37.50 AMPERES NOMINAL AND AACBZ37.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG125.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 SCREW |
| OVERALL LENGTH | 3.620 INCHES NOMINAL |
| OVERALL HEIGHT | 1.125 INCHES NOMINAL |
| OVERALL WIDTH | 1.125 INCHES NOMINAL |
| TEST DATA DOCUMENT | 82577-H980122 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | F/A-18C/D AN/E/I FSCM 82577 |