NSN 5961-01-439-2392
Part Details | TRANSISTOR
5961-01-439-2392 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1327282401, 13-2728240-1, PK4478, PK4478, 5961-01-439-2392, 01-439-2392, 5961014392392, 014392392
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 03, 1996 | 01-439-2392 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-439-2392
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 13-2728240-1 | 04655 | GENERAL DYNAMICS MISSION SYSTEMS,INC. |
| PK4478 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| PK4478 | 58420 | SERTECH LABORATORIES INC |
Technical Data | NSN 5961-01-439-2392
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW30.0 MAXIMUM AND CAX30.00 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | COMPRESSION |
| TERMINAL TYPE AND QUANTITY | 16 CASE |
| OVERALL LENGTH | 0.180 INCHES NOMINAL |
| OVERALL HEIGHT | 0.065 INCHES MAXIMUM |
| OVERALL WIDTH | 0.180 INCHES NOMINAL |
| TEST DATA DOCUMENT | 04655-13-2728240 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | AN/PRC-114(V) E/I FSCM 04655 |
| PRECIOUS MATERIAL AND LOCATION | PLATED LEADS GOLD |