NSN 5961-01-443-9508
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-443-9508 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MMBZ5226BLT1, MMBZ5226B, PMBZ5226B, MMBZ5226BLT1, 6474627, 647462-7, 5961-01-443-9508, 01-443-9508, 5961014439508, 014439508
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 23, 1997 | 01-443-9508 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-443-9508
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MMBZ5226BLT1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MMBZ5226B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| PMBZ5226B | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| MMBZ5226BLT1 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 647462-7 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-443-9508
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET3.3 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| POWER RATING PER CHARACTERISTIC | BZAAG225.0 MILLIWATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM |