NSN 5961-01-449-5403
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-449-5403 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MMSZ5256B, MMSZ5256B, MMSZ5256BT1, MMSZ5256B, MMSZ5256B, MMSZ5256B, 38149236, 381492-36, MMSZ5256B, MMSZ5256BTI, 5961-01-449-5403, 01-449-5403, 5961014495403, 014495403
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 04, 1997 | 01-449-5403 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-449-5403
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MMSZ5256B | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| MMSZ5256B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MMSZ5256BT1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MMSZ5256B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MMSZ5256B | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| MMSZ5256B | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 381492-36 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| MMSZ5256B | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
| MMSZ5256BTI | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
Technical Data | NSN 5961-01-449-5403
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BGD34.2 MINIMUM AND CGD37.8 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BZCAG300.0A MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZLM55.0 DEG CELSIUS AND CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM |
| SPECIAL FEATURES | NEXT ASSY: 724542 |
| END ITEM IDENTIFICATION | ARC-164 & ACR-222 APACHE |