NSN 5961-01-458-1729
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-458-1729 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: UM9915R, UM9895, 40602120701, 4060212-0701, 4060212, 5961-01-458-1729, 01-458-1729, 5961014581729, 014581729
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 15, 1998 | 01-458-1729 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-458-1729
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| UM9915R | 12969 | MICRO USPD INC |
| UM9895 | 12969 | MICRO USPD INC |
| 4060212-0701 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| 4060212 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-458-1729
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT200.0 MINIMUM |
| CAPACITANCE RATING IN PICOFARADS | 0.5 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| TEST DATA DOCUMENT | 06845-4060212 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | APX-100 |