NSN 5961-01-466-0399
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-466-0399 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 2SA812, 2SA812, 5961-01-466-0399, 01-466-0399, 5961014660399, 014660399
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 01, 1999 | 01-466-0399 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-466-0399
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SA812 | 0T1F7 | ANRITSU COMPANY |
| 2SA812 | 33297 | NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV |
Technical Data | NSN 5961-01-466-0399
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBY50.0 MAXIMUM AND CAB60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCCF200.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZMM55.0 DEG CELSIUS AND CAZM150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 1.400 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 2.500 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 1.100 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | LOW FREQUENCY LOW POWER SILICON PNP BJT |
| END ITEM IDENTIFICATION | GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT |