NSN 5961-01-467-6676
Part Details | TRANSISTOR
5961-01-467-6676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1FR7103, 3823211, 382321-1, 5961-01-467-6676, 01-467-6676, 5961014676676, 014676676
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 09, 1999 | 01-467-6676 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-467-6676
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1FR7103 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 382321-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-467-6676
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ACK20.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACAD3.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCBG2.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZMM55.0 DEG CELSIUS AND CAZM150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 8 |
| TERMINAL LENGTH | 0.158 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.244 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 0.198 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 0.075 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | DUAL POWER MOSFET |