NSN 5961-01-469-7311
Part Details | TRANSISTOR
5961-01-469-7311 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NH12903208, 12903208, 12903208, 12281179, 12903208, 5961-01-469-7311, 01-469-7311, 5961014697311, 014697311
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 22, 1999 | 01-469-7311 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-469-7311
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NH12903208 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 12903208 | 34371 | INTERSIL CORPORATIONDIV NA |
| 12903208 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 12281179 | 19200 | US ARMY ARDEC RDECOM |
| 12903208 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-01-469-7311
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAC120.0 MAXIMUM AND CGG75.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD5.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCBG35.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZMM65.0 DEG CELSIUS AND CAZM200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.962 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.840 INCHES MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | HCI |
| CRITICALITY CODE JUSTIFICATION | FEAT |