NSN 5961-01-470-7965
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-470-7965 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: VA700577014, VA-70-0577-014, MTV40301485, MTV4030-14-85, MTV40301485, MTV4030-14-85, 5961-01-470-7965, 01-470-7965, 5961014707965, 014707965
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 10, 2000 | 01-470-7965 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-470-7965
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VA-70-0577-014 | K0668 | LEONARDO MW LTD |
| MTV4030-14-85 | 0EFF4 | MICROMETRICS INC |
| MTV4030-14-85 | 3BBY6 | SEMI-GENERAL, INC. |
Technical Data | NSN 5961-01-470-7965
| Characteristic | Specifications |
|---|---|
| SPECIAL FEATURES | MANUFACTURER NOMENCLATURE TUNING VARACTOR; SILICON ABRUPT JUNCTION DEVICES OFFER HIGHEST Q AND LOWEST RESISTANCE AVAILABLE IN 30 VOLT TUNING DIODES; SILICON DIOXIDE PASSIVATION PROCESS ASSURES GREATER STABILITY, RELIABILITY AND LOW LEAKAGE CURRENTS AT HIGHER TEMPERATURES; USED FOR NARROW AND WIDE BAND TUNING THROUGH X-BAND; OPERATING TEMPERATURE -55 TO +150 DEGREES C |
| END ITEM IDENTIFICATION | ARI 23338 |