NSN 5961-01-474-3668
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-474-3668 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: FX1N6159, FX1N6159, 5961-01-474-3668, 01-474-3668, 5961014743668, 014743668
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 02, 2000 | 01-474-3668 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-474-3668
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FX1N6159 | 14099 | SEMTECH CORPORATION |
| FX1N6159 | SH879 | SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY |
Technical Data | NSN 5961-01-474-3668
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT45.9 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | CKCCH5.00 MICROAMPERES |
| INCLOSURE MATERIAL | CERAMIC |
| OVERALL LENGTH | 1.940 INCHES MINIMUM AND 2.785 INCHES MAXIMUM |
| OVERALL WIDTH | 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | LOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 1500 WATT PEAK PULSE POWER; 7.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY |