NSN 5961-01-475-1008
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-475-1008 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N963BUR1, 1N963BUR-1, 1N963BUR1, 1N963BUR-1, MILPRF1950011, MIL-PRF-19500/11, JANTX1N963BUR1, JANTX1N963BUR-1, 5961-01-475-1008, 01-475-1008, 5961014751008, 014751008
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 22, 2000 | 01-475-1008 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-475-1008
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N963BUR-1 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 1N963BUR-1 | 14552 | MICROSEMI CORPORATION |
| MIL-PRF-19500/11 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N963BUR-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-475-1008
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDA12.0 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS32.00 MILLIAMPERES NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-213AA |
| SPECIAL FEATURES | SURFACE MOUNT ROUND CAPS; METALLURGICAL BOND |