NSN 5961-01-475-1016
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-475-1016 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N6103AUS, 1N6103AUS, MILPRF19500516, MIL-PRF-19500/516, JANTX1N6103AUS, 5961-01-475-1016, 01-475-1016, 5961014751016, 014751016
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 22, 2000 | 01-475-1016 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-475-1016
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N6103AUS | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 1N6103AUS | 14552 | MICROSEMI CORPORATION |
| MIL-PRF-19500/516 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N6103AUS | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-475-1016
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ACT7.1 NOMINAL AND CDE5.7 MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| OVERALL LENGTH | 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| SPECIAL FEATURES | 500 WATT MAX. PEAK PULSE POWER; E-MELF PACKAGE; SQUARE END CAP DIODES |