NSN 5961-01-478-6087
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-478-6087 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 80RIA80, 2N2025, 70C10BIL, 70C10B-IL, 12961055, 5961-01-478-6087, 01-478-6087, 5961014786087, 014786087
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 20, 2000 | 01-478-6087 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-478-6087
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 80RIA80 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 2N2025 | 59993 | INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging |
| 70C10B-IL | 59377 | MICROSEMI CORP-COLORADO |
| 12961055 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-01-478-6087
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| MOUNTING METHOD | UNTHREADED HOLE |
| OVERALL HEIGHT | 7.180 INCHES NOMINAL |
| OVERALL WIDTH ACROSS FLATS | 1.062 INCHES MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | HARDNESS CRITICAL PROCESS |
| END ITEM IDENTIFICATION | TANK,ABRAMS M-1 |