NSN 5961-01-478-8778
Part Details | TRANSISTOR
5961-01-478-8778 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SMBT2222A, SMBT2222A, 12467085, 5961-01-478-8778, 01-478-8778, 5961014788778, 014788778
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 29, 2000 | 01-478-8778 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-478-8778
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SMBT2222A | 4KYR2 | INFINEON TECHNOLOGIES NORTH AMERICACORP. |
| SMBT2222A | 0B549 | SIEMENS COMPONENTS INCINTEGRATED CIRCUIT DIV |
| 12467085 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-01-478-8778
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CA+40.0 MAXIMUM AND CAL75.0 MAXIMUM AND CBA6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACFM600.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF330.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.110 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 3.050 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 1.110 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.500 MILLIMETERS MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 19200-12467085 MANUFACTURERS SOURCE CONTROL |
| END ITEM IDENTIFICATION | M-1 ABRAMS TANK |