NSN 5961-01-479-3565
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-479-3565 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N969BUR1, JANTX1N969BUR-1, 5961-01-479-3565, 01-479-3565, 5961014793565, 014793565
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 19, 2000 | 01-479-3565 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-479-3565
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N969BUR-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-479-3565
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET22.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| OVERALL LENGTH | 2.175 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.080 INCHES MAXIMUM |
| SPECIAL FEATURES | MULTIPLE MOUNTING ZENER DIAODE; HERMATICALLY SEALED GLASS CASE; EXTERNAL SURFACES ARE CORROSION RESISTANT AND LEADS SOLDERABLE; THERMAL RESISTANCE: 200 DEGREES CELSIUS/W (TYPICAL) JUNCTION TO LEAD AT 0.375 INCHES FROM BODY |
| CRITICALITY CODE JUSTIFICATION | AGAV |
| END ITEM IDENTIFICATION | ELECTRONIC COMPONENT ASSY |