NSN 5961-01-479-3649
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-479-3649 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MILPRF19500435, MIL-PRF-19500/435, JANTX1N4120UR1, JANTX1N4120UR-1, 5961-01-479-3649, 01-479-3649, 5961014793649, 014793649
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 19, 2000 | 01-479-3649 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-479-3649
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MIL-PRF-19500/435 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4120UR-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-479-3649
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET30.0 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| POWER RATING PER CHARACTERISTIC | BZCAF0.5 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM |
| SPECIAL FEATURES | SURFACE MOUNT DIODE; HERMATICALL SEALED GLASS CASING; TIN-LEAD PLATED SOLDERABLE END CAPS; INTERNAL METALLURGICAL BOND |
| CRITICALITY CODE JUSTIFICATION | AGAV |
| END ITEM IDENTIFICATION | ELECTRONIC COMPONENT ASSY |