NSN 5961-01-492-2312
Part Details | TRANSISTOR
5961-01-492-2312 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: Q350002001, Q35-0002-001, J21118, J211-18, 5961-01-492-2312, 01-492-2312, 5961014922312, 014922312
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 19, 2001 | 01-492-2312 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-492-2312
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| Q35-0002-001 | 14304 | HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION |
| J211-18 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-492-2312
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG350.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| FEATURES PROVIDED | HIGH FREQUENCY |