NSN 5961-01-501-6016
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-501-6016 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 927A4959, 927A495-9, 1N4583A, 927A4959, 927A495-9, 5961-01-501-6016, 01-501-6016, 5961015016016, 015016016
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 08, 2002 | 01-501-6016 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-501-6016
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 927A495-9 | 99167 | HAMILTON SUNDSTRAND CORPORATION |
| 1N4583A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 927A495-9 | 83843 | SUNDSTRAND CORPELECTRIC POWER SYSTEMS DIV |
Technical Data | NSN 5961-01-501-6016
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET6.4 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS4.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.125 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.313 INCHES MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| FEATURES PROVIDED | RADIATION HARDENED |
| TEST DATA DOCUMENT | 99167-927A495 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |