NSN 5961-01-505-8908
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-505-8908 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 6012401001, 6012401-001, BAV199, BAV199, 5961-01-505-8908, 01-505-8908, 5961015058908, 015058908
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 18, 2003 | 01-505-8908 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-505-8908
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 6012401-001 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| BAV199 | 18324 | PHILIPS SEMICONDUCTORS INC |
| BAV199 | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
Technical Data | NSN 5961-01-505-8908
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDC85.0 MAXIMUM AND CBG75.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAG300.00 MILLIAMPERES NOMINAL AND AACCF0.40 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCBH250.0 MILLIWATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| OVERALL LENGTH | 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 0.9 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.1 MILLIMETERS MINIMUM AND 2.5 MILLIMETERS MAXIMUM |
| END ITEM IDENTIFICATION | 4920014959100; F-16 AIRCRAFT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | DIODE |