NSN 5961-01-512-5416
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-512-5416 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: 160MT80KB, 5961-01-512-5416, 01-512-5416, 5961015125416, 015125416
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 04, 2003 | 01-512-5416 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 3 PHASE
Cross Reference | NSN 5961-01-512-5416
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 160MT80KB | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
Technical Data | NSN 5961-01-512-5416
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON ALLOY |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1600.0 REPETITIVE PEAK REVERSE VOLTAGE |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | ACG160.00 AMPERES AND ACF1500.00 AMPERES |
| MOUNTING METHOD | UNTHREADED HOLE AND BASE |
| TERMINAL TYPE AND QUANTITY | 6 TAB W/SCREW |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 3 PHASE |
| OVERALL LENGTH | 3.700 INCHES NOMINAL |
| OVERALL WIDTH | 1.380 INCHES NOMINAL |
| OVERALL HEIGHT | 1.170 INCHES NOMINAL |
| SPECIAL FEATURES | REQUESTED NAME THREE PHASE BRIDGE |
| END ITEM IDENTIFICATION | ARC 169 SOLID |