NSN 5961-01-517-8512
Part Details | TRANSISTOR
5961-01-517-8512 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: NH12993524, 5961015178512, IXFN340N07, 12993524, 5961-01-517-8512, 01-517-8512, 5961015178512, 015178512
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 23, 2004 | 01-517-8512 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-517-8512
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NH12993524 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5961015178512 | A00AM | E.C.A ETABLISSEMENT CENTRALDESAPPROVISIONNEMENTS DES FORCES |
| IXFN340N07 | 0A5K5 | IXYS CORPORATION |
| 12993524 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-01-517-8512
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAG70.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD340.00 AMPERES NOMINAL AND AACBZ340.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG700.0 WATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 THREADED HOLE |
| OVERALL LENGTH | 1.496 INCHES MINIMUM AND 1.505 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.460 INCHES MINIMUM AND 0.481 INCHES MAXIMUM |
| OVERALL WIDTH | 0.990 INCHES MINIMUM AND 1.001 INCHES MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | AMBEINT TEMP -55 TO +150 DEGREE C; SEMI CONDUCTOR DEVICE, POWER MOSFET SINGLE DIE; HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE,POWER MOSFET SINGLE DIE |