NSN 5961-01-528-0602

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-528-0602 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: GBPC3510, 10089371, 5961-01-528-0602, 01-528-0602, 5961015280602, 015280602

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 02, 200501-528-060262108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-528-0602
Part Number Cage Code Manufacturer
GBPC351007933FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ
10089371A486GNIMIKKEISTOKESKUS NCB FINLAND
Technical Data | NSN 5961-01-528-0602
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1000.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 REVERSE VOLTAGE, DC
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICA00.00 AMPERES AND ACC35.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
SPECIAL FEATURESGLASS PASSIVATED BRIDGE RECTIFIER,INTEGRALLY MOLDED HEATSINK,ISOLATED VOLTAGE FROM CASE OVER 2500 VOLTS.
END ITEM IDENTIFICATIONA/M37 T21D