NSN 5961-01-532-4773
Part Details | TRANSISTOR
5961-01-532-4773 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 13589482, 5961-01-532-4773, 01-532-4773, 5961015324773, 015324773
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 10, 2005 | 01-532-4773 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-532-4773
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 13589482 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-532-4773
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AD30.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF75.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | 0$DCJ0000 |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.130 INCHES NOMINAL |
| OVERALL HEIGHT | 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.039 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| SPECIAL FEATURES | TMOS V, POWER FIELD EFFECT TRANSISTOR; P-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| END ITEM IDENTIFICATION | NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S; MISSILE, PATRIOT |