NSN 5961-01-535-1428
Part Details | TRANSISTOR
5961-01-535-1428 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: CXT3019, 5961-01-535-1428, 01-535-1428, 5961015351428, 015351428
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 16, 2005 | 01-535-1428 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-535-1428
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CXT3019 | 55464 | CENTRAL SEMICONDUCTOR CORP. |
Technical Data | NSN 5961-01-535-1428
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM140.0 MAXIMUM AND CA+80.0 MAXIMUM AND CBA7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC1.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| OVERALL LENGTH | 0.173 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM |
| OVERALL WIDTH | 0.146 INCHES MINIMUM AND 0.177 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| SPECIAL FEATURES | SOT-89 CASE; MANUFACTURED BY THE EPITAXIAL PLANAR PROCESS, EPOXY MOLDED; DESIGNED FOR HIGH CURRENT GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SURFACE MOUNT NPN SILICON TRANSISTOR |