NSN 5961-01-565-2227
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-565-2227 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTXV1N5529B1, JANTXV1N5529B-1, MILS19500437, MIL-S-19500/437, MILPRF19500437, MIL-PRF-19500/437, JANTXV1N5529B1, JANTXV1N5529B-1, JANTXV1N5529B, 5961-01-565-2227, 01-565-2227, 5961015652227, 015652227
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 16, 2008 | 01-565-2227 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-565-2227
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTXV1N5529B-1 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| MIL-S-19500/437 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/437 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXV1N5529B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXV1N5529B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-565-2227
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET9.1 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEA42.00 MILLIAMPERES NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.022 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 2.150 INCHES MINIMUM |
| TEST DATA DOCUMENT | 81349-MIL-STD-750 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |