NSN 5961-01-569-3427
Part Details | TRANSISTOR
5961-01-569-3427 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IB1214M370, 5961-01-569-3427, 01-569-3427, 5961015693427, 015693427
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 26, 2008 | 01-569-3427 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-569-3427
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IB1214M370 | 1CXL4 | INTEGRA TECHNOLOGIES, INC. |
Technical Data | NSN 5961-01-569-3427
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | THE HIGH POWER RADAR TRANSISTOR DEVICE IS DESIGNED FOR L-BAND RADAR SYSTEMS OPERATING OVER THE INSTANTANEOUS BANDWIDTH OF 1.210-1.400 GHZ, WHILE OPERATING IN CLASS C MODE THIS COMMON BASE DEVICE SUPPLIES A MINIMUM OF 370 WATTS OF PEAK PULSE POWER |