NSN 5961-01-579-5637
Part Details | TRANSISTOR
5961-01-579-5637 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: UF2805B, 91725879, 5961-01-579-5637, 01-579-5637, 5961015795637, 015795637
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 17, 2009 | 01-579-5637 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-579-5637
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| UF2805B | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 91725879 | F6481 | THALES SA |
Technical Data | NSN 5961-01-579-5637
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCK20.0 MINIMUM AND CAX65.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD1.40 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCBM14.4 WATTS |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL LENGTH | 0.815 INCHES MINIMUM AND 0.825 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.580 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| OVERALL WIDTH | 0.144 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | GENERAL PURPOSE |
| SPECIAL FEATURES | N-CHANNEL ENHANCEMENT MODE DEVICE; 100-500 MHZ; DMOS STRUCTURE; LOWER NOISE FLOOR |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF MOSFET POWER TRANSISTOR, 5W, 28V, 100-500 MHZ |