NSN 5961-01-579-6640
Part Details | TRANSISTOR
5961-01-579-6640 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: BC850CW ROHS, 99218880, 5961-01-579-6640, 01-579-6640, 5961015796640, 015796640
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 19, 2009 | 01-579-6640 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-579-6640
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BC850CW ROHS | 18324 | PHILIPS SEMICONDUCTORS INC |
| 99218880 | F6481 | THALES SA |
Technical Data | NSN 5961-01-579-6640
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BAM30.0 MINIMUM AND CAM50.0 MAXIMUM AND BFE30.0 MINIMUM AND CFE45.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF200.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS AND CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-323 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.6 MILLIMETERS MINIMUM AND 0.8 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.0 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | APPLICATIONS INCLUDE LOW NOISE STAGES IN TAPE RECORDERS, HI-FI AMPS AND OTHER AUDIO-FREQUENCY EQUIPMENT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | NPN GENERAL PURPOSE TRANSISTOR |