NSN 5961-01-580-2331
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-580-2331 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BZG0411, BZG04-11, 5961-01-580-2331, 01-580-2331, 5961015802331, 015802331
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 08, 2009 | 01-580-2331 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-580-2331
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BZG04-11 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-580-2331
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT12.4 MINIMUM AND AFQ1.2 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | CF50.00 AMPERES NOMINAL |
| OVERALL LENGTH | 5.5 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 2.3 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 2.8 MILLIMETERS NOMINAL |
| SPECIAL FEATURES | JUNCTION TEMPERATURE: 150 DEG C; STORAGE TEMP. RANGE: M65/P150 DEG C; JUNCTION CAPACITANCE: 850 PF; GLASS PASSIVATED JUNCTION; STAND-OFF VOLTAGE RANGE: 8.2 V TO 200.0 V; LEAD-FREE COMPONENT; APRROX. WEIGHT: 77 MG |
| END ITEM IDENTIFICATION | COMBINED SYSTEM INTERIM ACC-RPC-SFP |