NSN 5961-01-580-4459
Part Details | TRANSISTOR
5961-01-580-4459 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: PSMN025100D, PSMN025-100D, 5961-01-580-4459, 01-580-4459, 5961015804459, 015804459
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 15, 2009 | 01-580-4459 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-580-4459
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| PSMN025-100D | 18324 | PHILIPS SEMICONDUCTORS INC |
Technical Data | NSN 5961-01-580-4459
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| TERMINAL LENGTH | 2.75 MILLIMETERS NOMINAL |
| OVERALL LENGTH | 6.60 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 10.0 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 2.30 MILLIMETERS NOMINAL |
| FEATURES PROVIDED | HIGH POWER |
| SPECIAL FEATURES | FET = FIELD-EFFECT TRANSISTOR (TRENCHMOS TECHNOLOGY) |
| SPECIAL TEST FEATURES | HIGH OPERATING POWER, LOW CONDUCTION LOSSES, SUITABLE FOR HIGH FREQUENCY APPLICATIONS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET |