NSN 5961-01-580-6553

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-580-6553 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: MQSPD25, JANSPD25, 5961-01-580-6553, 01-580-6553, 5961015806553, 015806553

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 22, 200901-580-655362108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-580-6553
Part Number Cage Code Manufacturer
MQSPD2512954MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI
JANSPD2581349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
Technical Data | NSN 5961-01-580-6553
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG25.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.144 INCHES MAXIMUM
OVERALL WIDTH1.144 INCHES MAXIMUM
OVERALL HEIGHT1.060 INCHES MAXIMUM
END ITEM IDENTIFICATIONNUCLEAR POWER PLANTS
PART NAME ASSIGNED BY CONTROLLING AGENCYDIODE