NSN 5961-01-581-5270
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-581-5270 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MUR8100E, MUR8100E, 5961-01-581-5270, 01-581-5270, 5961015815270, 015815270
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 20, 2010 | 01-581-5270 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-581-5270
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MUR8100E | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MUR8100E | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
Technical Data | NSN 5961-01-581-5270
| Characteristic | Specifications |
|---|---|
| SPECIAL FEATURES | 20 MJ AVALANCHE ENERGY GUARANTEED; ULTRAFAST 75 NANOSECOND RECOVERY TIME; 175 DEGREE CELSIUS OPERATING JUNCTION TEMPERATURE; TO-220 PACKAGE; EPOXY MEETS UL94 V-0 AT 0.125 INCHES; LOW FORWARD VOLTAGE; LOW LEAKAGE CURRENT; HIGH TEMPERATURE GLASS PASSIVATED JUNCTION; REVERSE VOLTAGE TO 1000 V |