NSN 5961-01-583-9082
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-583-9082 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1M91Z5, 1M9-1Z5, MILPRF19500115, MIL-PRF-19500/115, JANTX1N3019B1, JANTX1N3019B-1, JANTX1N3019B, 5961-01-583-9082, 01-583-9082, 5961015839082, 015839082
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 12, 2010 | 01-583-9082 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-583-9082
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1M9-1Z5 | 1VPW8 | GENERAL DYNAMICS MISSION SYSTEMS,INC |
| MIL-PRF-19500/115 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N3019B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N3019B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-583-9082
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET9.1 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AS28.00 MILLIAMPERES NOMINAL AND BACEA105.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| SPECIAL FEATURES | METALLURGICAL BOND |