NSN 5961-01-584-6369
Part Details | TRANSISTOR
5961-01-584-6369 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6909, 5961-01-584-6369, 01-584-6369, 5961015846369, 015846369
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 03, 2010 | 01-584-6369 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-584-6369
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6909 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
Technical Data | NSN 5961-01-584-6369
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C2.3 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BS10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZAAB300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| SPECIAL FEATURES | HERMETICALLY SEALED; MILITARY OPTION; OVER-VOLTAGE PROTECTION; HIGH PERFORMANCE JFET; 400 G FS MIN (US) |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | N-CHANNEL JFET CIRCUIT |