NSN 5961-01-595-5644
Part Details | TRANSISTOR
5961-01-595-5644 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 11481693, IRFR3910PBF, 11481693, 5961-01-595-5644, 01-595-5644, 5961015955644, 015955644
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 02, 2011 | 01-595-5644 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-595-5644
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 11481693 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| IRFR3910PBF | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 11481693 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-595-5644
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAG100.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD1.60 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG79.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 INSULATED WIRE LEAD |
| OVERALL LENGTH | 10.42 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 2.38 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 6.60 MILLIMETERS MAXIMUM |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | 100V SINGLE N CHANNEL HEXFET POWER MOSFET IN A D-PAK PACKAGE |