NSN 5961-01-603-8425
Part Details | TRANSISTOR
5961-01-603-8425 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SI2308BDST1E3, SI2308BDS-T1-E3, 13657197, 5961-01-603-8425, 01-603-8425, 5961016038425, 016038425
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 19, 2012 | 01-603-8425 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-603-8425
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SI2308BDS-T1-E3 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 13657197 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-603-8425
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBN60.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| END ITEM IDENTIFICATION | 1430-01-087-6330 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANSISTOR,MOSFET,N-CHANNEL,60V |