NSN 5961-01-612-9865

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-612-9865 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: PS299644.01, UTF20120, UFT20120, UTF20120, UFT20120, 5961-01-612-9865, 01-612-9865, 5961016129865, 016129865

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 26, 201201-612-986562108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-612-9865
Part Number Cage Code Manufacturer
PS299644.01L4491L-3 COMMUNICATIONS MAPPS INC
UTF2012043611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
UFT2012043611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
UTF2012014552MICROSEMI CORPORATION
UFT2012014552MICROSEMI CORPORATION
Technical Data | NSN 5961-01-612-9865
Characteristic Specifications
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 REVERSE VOLTAGE, PEAK
MOUNTING METHOD BASE AND BOLT
OPERATING TEMP RANGE-55.0 TO +175.0 DEG CELSIUS
OVERALL LENGTH3.630 INCHES MAXIMUM
OVERALL WIDTH0.700 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL HEIGHT0.630 INCHES MAXIMUM
SPECIAL FEATURESVRPM 50-800 VOLTS, HIGH SURGE CAPACITY; 2X100 AMP CURRENT RATE; ULTRAFAST
END ITEM IDENTIFICATIONROHS COMPLIANT, ULTRAFAST
PART NAME ASSIGNED BY CONTROLLING AGENCYRECOVERY MODULE